FBG10N05AC - EPC Space, LLC - Transistors - FETs, MOSFETs - Single
REF: FBG10N05AC EPC Space, LLC
FBG10N05AC

EPC Space, LLC

GAN FET HEMT 100V5A COTS 4FSMD-A

FBG10N05AC is a Transistors - FETs, MOSFETs - Single manufactured by EPC Space, LLC. GAN FET HEMT 100V5A COTS 4FSMD-A. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 4-SMD, No Lead.

In Stock: 68

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V
Rds On (Max) @ Id, Vgs44mOhm @ 5A, 5V
Vgs(th) (Max) @ Id2.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs2.2 nC @ 5 V
Vgs (Max)+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds233 pF @ 50 V
FET Feature-
Power Dissipation (Max)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package4-SMD
Package / Case4-SMD, No Lead

Need a Quote for FBG10N05AC?

Submit your RFQ and get a quote within 24 hours.

Need components fast? Get pricing & lead time within 24 hours. Submit an RFQ →