| Mfr Part # | Qty | Price | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
CSD18537NKCS
MOSFET N-CH 60V 50A TO220-3
Texas Instruments
|
8,233 | 1.42000 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 50A (Tc) | 6V, 10V | 14mOhm @ 25A, 10V | 3.5V @ 250µA | 18 nC @ 10 V | ±20V | 1480 pF @ 30 V | - | 94W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | Details |
|
CSD19501KCS
MOSFET N-CH 80V 100A TO220-3
Texas Instruments
|
884 | 2.33000 | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 100A (Ta) | 6V, 10V | 6.6mOhm @ 60A, 10V | 3.2V @ 250µA | 50 nC @ 10 V | ±20V | 3980 pF @ 40 V | - | 217W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | Details |
|
NTF3055-160T1
MOSFET N-CH 60V 2A SOT223
onsemi
|
21,727 | 0.09000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 2A (Ta) | 10V | 160mOhm @ 1A, 10V | 4V @ 250µA | 14 nC @ 10 V | ±20V | 280 pF @ 25 V | - | 1.3W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | SOT-223 (TO-261) | TO-261-4, TO-261AA | Details |
|
SSM3J374R,LXHF
SMOS P-CH VDSS:-30V VGSS:-20/+10
Toshiba Semiconductor and Storage
|
1 | 0.41000 | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 4A (Ta) | 4V, 10V | 71mOhm @ 3A, 10V | 2V @ 100µA | 5.9 nC @ 10 V | +10V, -20V | 280 pF @ 15 V | - | 1W (Ta) | 150°C | Surface Mount | SOT-23F | SOT-23-3 Flat Leads | Details |
|
IRLS3034TRLPBF
MOSFET N-CH 40V 195A D2PAK
Infineon Technologies
|
6,610 | 3.74000 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 4.5V, 10V | 1.7mOhm @ 195A, 10V | 2.5V @ 250µA | 162 nC @ 4.5 V | ±20V | 10315 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Details |
|
SIHP14N60E-GE3
MOSFET N-CH 600V 13A TO220AB
Vishay Siliconix
|
2,999 | 2.48000 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 13A (Tc) | 10V | 309mOhm @ 7A, 10V | 4V @ 250µA | 64 nC @ 10 V | ±30V | 1205 pF @ 100 V | - | 147W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 | Details |
|
PSMN2R8-40PS,127
MOSFET N-CH 40V 100A TO220AB
Nexperia USA Inc.
|
78 | 2.90000 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 10V | 2.8mOhm @ 10A, 10V | 4V @ 1mA | 71 nC @ 10 V | ±20V | 4491 pF @ 20 V | - | 211W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 | Details |
|
MCH6321-TL-W
MOSFET P-CH 20V 4A 6MCPH
onsemi
|
2,990 | 0.11000 | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 4A (Ta) | 1.8V, 4.5V | 83mOhm @ 2A, 4.5V | - | 4.6 nC @ 4.5 V | ±10V | 375 pF @ 10 V | - | 1.5W (Ta) | 150°C (TJ) | Surface Mount | 6-MCPH | 6-SMD, Flat Leads | Details |
|
SI4136DY-T1-GE3
MOSFET N-CH 20V 46A 8SO
Vishay Siliconix
|
9,509 | 1.71000 | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 46A (Tc) | 4.5V, 10V | 2mOhm @ 15A, 10V | 2.2V @ 250µA | 110 nC @ 10 V | ±20V | 4560 pF @ 10 V | - | 3.5W (Ta), 7.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | Details |
|
DMP3007LK3-13
MOSFET P-CH 30V 18.5A TO252
Diodes Incorporated
|
2,275 | 0.98000 | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 18.5A (Ta) | 4.5V, 10V | 7mOhm @ 17A, 10V | 2.8V @ 250µA | 64.2 nC @ 10 V | ±25V | 2826 pF @ 15 V | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 | Details |
|
IXTX550N055T2
MOSFET N-CH 55V 550A PLUS247-3
IXYS
|
5,336 | 20.60870 | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 550A (Tc) | 10V | 1.6mOhm @ 100A, 10V | 4V @ 250µA | 595 nC @ 10 V | ±20V | 40000 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 Variant | Details |
|
IXFZ140N25T
MOSFET N-CH 250V 100A DE475
IXYS
|
9,562 | 33.59400 | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 100A (Tc) | 10V | 17mOhm @ 60A, 10V | 5V @ 4mA | 255 nC @ 10 V | ±20V | 19000 pF @ 25 V | - | 445W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DE475 | 6-SMD, Flat Leads | Details |
|
TK4R4P06PL,RQ
MOSFET N-CHANNEL 60V 58A DPAK
Toshiba Semiconductor and Storage
|
4,212 | 1.38000 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 58A (Tc) | 4.5V, 10V | 4.4mOhm @ 29A, 10V | 2.5V @ 500µA | 48.2 nC @ 10 V | ±20V | 3280 pF @ 30 V | - | 87W (Tc) | 175°C | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | Details |
|
BSC150N03LD
N-CHANNEL POWER MOSFET
Infineon Technologies
|
8,000 | 0.40000 | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Details |
|
IPA90R500C3XKSA2
MOSFET N-CH 900V 11A TO220
Infineon Technologies
|
5,987 | 2.91460 | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 11A (Tc) | 10V | 500mOhm @ 6.6A, 10V | 3.5V @ 740µA | 68 nC @ 10 V | ±20V | 1700 pF @ 100 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack | Details |
|
IRF1404PBF
MOSFET N-CH 40V 202A TO220AB
Infineon Technologies
|
2,550 | 2.31000 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 202A (Tc) | 10V | 4mOhm @ 121A, 10V | 4V @ 250µA | 196 nC @ 10 V | ±20V | 5669 pF @ 25 V | - | 333W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 | Details |
|
MTDF1N03HDR2
SMALL SIGNAL N-CHANNEL MOSFET
onsemi
|
4,639 | 0.22000 | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Details |
|
NTMFS5C646NLT3G
MOSFET N-CH 60V 20A/93A 5DFN
onsemi
|
9,372 | 1.21080 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 20A (Ta), 93A (Tc) | 4.5V, 10V | 4.7mOhm @ 50A, 10V | 2V @ 250µA | 33.7 nC @ 10 V | ±20V | 2164 pF @ 25 V | - | 3.7W (Ta), 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads | Details |
|
STD110N8F6
MOSFET N-CH 80V 80A DPAK
STMicroelectronics
|
1,794 | 1.82000 | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 80A (Tc) | 10V | 6.5mOhm @ 40A, 10V | 4.5V @ 250µA | 150 nC @ 10 V | ±20V | 9130 pF @ 40 V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | Details |
|
CSD25303W1015
MOSFET P-CH 20V 3A 6DSBGA
Texas Instruments
|
4,390 | 0.28000 | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 3A (Tc) | 1.8V, 4.5V | 58mOhm @ 1.5A, 4.5V | 1V @ 250µA | 4.3 nC @ 4.5 V | ±8V | 435 pF @ 10 V | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-DSBGA (1x1.5) | 6-UFBGA, DSBGA | Details |
|
SISH108DN-T1-GE3
MOSFET N-CH 20V 14A PPAK1212-8SH
Vishay Siliconix
|
7,407 | 0.74000 | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 14A (Ta) | 4.5V, 10V | 4.9mOhm @ 22A, 10V | 2V @ 250µA | 30 nC @ 4.5 V | ±16V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8SH | PowerPAK® 1212-8SH | Details |
|
NTMFS4923NET3G
MOSFET N-CH 30V 12.7A/91A 5DFN
onsemi
|
15,000 | 0.75000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 12.7A (Ta), 91A (Tc) | 4.5V, 10V | 3.3mOhm @ 30A, 10V | 2V @ 250µA | 22 nC @ 4.5 V | ±20V | 4850 pF @ 15 V | - | 930mW (Ta), 48W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads | Details |
|
BTS112A
N-CHANNEL POWER MOSFET
Infineon Technologies
|
3,397 | 2.23000 | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Details |
|
NTE2396A
MOSFET N-CHANNEL 100V 33A TO220
NTE Electronics, Inc
|
1,344 | 1.74000 | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 33A (Tc) | 10V | 44mOhm @ 16A, 10V | 4V @ 250µA | 71 nC @ 10 V | ±20V | 1960 pF @ 25 V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 | Details |
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