| Mfr Part # | Qty | Price | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FQP4N90
MOSFET N-CH 900V 4.2A TO220-3
Fairchild Semiconductor
|
2,156 | 1.47000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 4.2A (Tc) | 10V | 3.3Ohm @ 2.1A, 10V | 5V @ 250µA | 30 nC @ 10 V | ±30V | 1100 pF @ 25 V | - | 140W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | Details |
|
PMPB20UN,115
MOSFET N-CH 20V 6.6A 6DFN
NXP USA Inc.
|
7,393 | 0.06000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 6.6A (Ta) | 1.8V, 4.5V | 25mOhm @ 6.6A, 4.5V | 1V @ 250µA | 7.1 nC @ 4.5 V | ±8V | 460 pF @ 10 V | - | 1.7W (Ta), 12.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 6-DFN2020MD (2x2) | 6-UDFN Exposed Pad | Details |
|
STF2HNK60Z
MOSFET N-CH 600V 2A TO220FP
STMicroelectronics
|
1,188 | 1.65000 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 2A (Tc) | 10V | 4.8Ohm @ 1A, 10V | 4.5V @ 50µA | 15 nC @ 10 V | ±30V | 280 pF @ 25 V | - | 20W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack | Details |
|
NTD4858N-35G
MOSFET N-CH 25V 11.2A/73A IPAK
onsemi
|
124,316 | 0.57580 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 11.2A (Ta), 73A (Tc) | 4.5V, 10V | 6.2mOhm @ 30A, 10V | 2.5V @ 250µA | 19.2 nC @ 4.5 V | ±20V | 1563 pF @ 12 V | - | 1.3W (Ta), 54.5W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Stub Leads, IPak | Details |
|
IRF8010STRLPBF
MOSFET N-CH 100V 80A D2PAK
Infineon Technologies
|
5,859 | 2.70000 | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 80A (Tc) | 10V | 15mOhm @ 45A, 10V | 4V @ 250µA | 120 nC @ 10 V | ±20V | 3830 pF @ 25 V | - | 260W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Details |
|
CSD17555Q5A
MOSFET N-CH 30V 24A/100A 8VSON
Texas Instruments
|
139,741 | 0.87000 | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 24A (Ta), 100A (Tc) | 4.5V, 10V | 2.7mOhm @ 25A, 10V | 1.9V @ 250µA | 28 nC @ 4.5 V | ±20V | 4650 pF @ 15 V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (5x6) | 8-PowerTDFN | Details |
|
NVTFS004N04CTAG
MOSFET N-CH 40V 18A/77A 8WDFN
onsemi
|
5,364 | 0.70420 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 18A (Ta), 77A (Tc) | 10V | 4.9mOhm @ 35A, 10V | 3.5V @ 50µA | 18 nC @ 10 V | ±20V | 1150 pF @ 25 V | - | 3.2W (Ta), 55W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN | Details |
|
IXTP96P085T
MOSFET P-CH 85V 96A TO220AB
IXYS
|
7,736 | 6.90000 | Active | P-Channel | MOSFET (Metal Oxide) | 85 V | 96A (Tc) | 10V | 13mOhm @ 48A, 10V | 4V @ 250µA | 180 nC @ 10 V | ±15V | 13100 pF @ 25 V | - | 298W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | Details |
|
SIA437DJ-T1-GE3
MOSFET P-CH 20V 29.7A PPAK SC70
Vishay Siliconix
|
8,862 | 0.72000 | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 29.7A (Tc) | 1.5V, 4.5V | 14.5mOhm @ 8A, 4.5V | 900mV @ 250µA | 90 nC @ 8 V | ±8V | 2340 pF @ 10 V | - | 3.5W (Ta), 19W (Tc) | -50°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 | PowerPAK® SC-70-6 | Details |
|
STB120N4F6
MOSFET N-CH 40V 80A D2PAK
STMicroelectronics
|
4,948 | 2.59000 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | 10V | 4mOhm @ 40A, 10V | 4V @ 250µA | 65 nC @ 10 V | ±20V | 3850 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Details |
|
IXFR26N100P
MOSFET N-CH 1000V 15A ISOPLUS247
IXYS
|
7,650 | 35.28430 | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 15A (Tc) | 10V | 430mOhm @ 13A, 10V | 6.5V @ 1mA | 197 nC @ 10 V | ±30V | 11900 pF @ 25 V | - | 290W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247™ | TO-247-3 | Details |
|
SI7178DP-T1-GE3
MOSFET N-CH 100V 60A PPAK SO-8
Vishay Siliconix
|
3,545 | 3.14000 | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 60A (Tc) | 10V | 14mOhm @ 10A, 10V | 4.5V @ 250µA | 72 nC @ 10 V | ±20V | 2870 pF @ 50 V | - | 6.25W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | Details |
|
SQ3425EV-T1_GE3
MOSFET P-CHANNEL 20V 7.4A 6TSOP
Vishay Siliconix
|
2,087 | 0.72000 | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 7.4A (Tc) | 2.5V, 4.5V | 60mOhm @ 4.7A, 4.5V | 1.4V @ 250µA | 10.3 nC @ 4.5 V | ±12V | 840 pF @ 10 V | - | 5W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 | Details |
|
RJK03M5DNS-00#J5
MOSFET N-CH 30V 25A 8HWSON
Renesas Electronics America Inc
|
5,000 | 0.49270 | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 25A (Ta) | 4.5V, 10V | 6.3mOhm @ 12.5A, 10V | - | 10.4 nC @ 4.5 V | ±20V | 1890 pF @ 10 V | - | 15W (Tc) | 150°C (TJ) | Surface Mount | 8-HWSON (3.3x3.3) | 8-PowerWDFN | Details |
|
FDS8672S
MOSFET N-CH 30V 18A 8SOIC
onsemi
|
3,543 | 1.90000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 18A (Ta) | 4.5V, 10V | 4.8mOhm @ 18A, 10V | 3V @ 1mA | 41 nC @ 10 V | ±20V | 2670 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | Details |
|
IXTX22N100L
MOSFET N-CH 1000V 22A PLUS247-3
IXYS
|
4,746 | 45.21000 | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 22A (Tc) | 10V | 600mOhm @ 11A, 20V | 5V @ 250µA | 270 nC @ 15 V | ±30V | 7050 pF @ 25 V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 Variant | Details |
|
TSM70N600CP ROG
MOSFET N-CHANNEL 700V 8A TO252
Taiwan Semiconductor Corporation
|
1,356 | 5.11000 | Active | N-Channel | MOSFET (Metal Oxide) | 700 V | 8A (Tc) | 10V | 600mOhm @ 4A, 10V | 4V @ 250µA | 12.6 nC @ 10 V | ±30V | 743 pF @ 100 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 | Details |
|
2SK209-Y(TE85L,F)
MOSFET N-CH 10V 14MA SC59
Toshiba Semiconductor and Storage
|
23,786 | 0.73000 | Active | N-Channel | MOSFET (Metal Oxide) | 10 V | 14mA | - | - | - | - | - | 13 pF @ 10 V | - | 150mW | 125°C (TJ) | Surface Mount | SC-59 | TO-236-3, SC-59, SOT-23-3 | Details |
|
SI2338DS-T1-GE3
MOSFET N-CH 30V 6A SOT23
Vishay Siliconix
|
9,727 | 0.55000 | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 6A (Tc) | 4.5V, 10V | 28mOhm @ 5.5A, 10V | 2.5V @ 250µA | 13 nC @ 10 V | ±20V | 424 pF @ 15 V | - | 1.3W (Ta), 2.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 | Details |
|
PSMN059-150Y,115
MOSFET N-CH 150V 43A LFPAK56
Nexperia USA Inc.
|
3,893 | 1.52000 | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 43A (Tc) | 10V | 59mOhm @ 12A, 10V | 4V @ 1mA | 27.9 nC @ 10 V | ±20V | 1529 pF @ 30 V | - | 113W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 | Details |
|
IXFX360N10T
MOSFET N-CH 100V 360A PLUS247-3
IXYS
|
3,467 | 13.56000 | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 360A (Tc) | 10V | 2.9mOhm @ 100A, 10V | 5V @ 3mA | 525 nC @ 10 V | ±20V | 33000 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 Variant | Details |
|
SPA15N60CFDXKSA1
MOSFET N-CH 650V 13.4A TO220-FP
Infineon Technologies
|
2,408 | 3.68640 | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 13.4A (Tc) | 10V | 330mOhm @ 9.4A, 10V | 5V @ 750µA | 84 nC @ 10 V | ±20V | 1820 pF @ 25 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-31 | TO-220-3 Full Pack | Details |
|
STU2NK100Z
MOSFET N-CH 1000V 1.85A IPAK
STMicroelectronics
|
8,870 | 3.52000 | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 1.85A (Tc) | 10V | 8.5Ohm @ 900mA, 10V | 4.5V @ 50µA | 16 nC @ 10 V | ±30V | 499 pF @ 25 V | - | 70W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | Details |
|
MCH6437-TL-E
MOSFET N-CH 20V 7A 6MCPH
onsemi
|
2,836 | 0.18040 | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 20 V | 7A (Ta) | 1.8V, 4.5V | 24mOhm @ 4A, 4.5V | - | 8.4 nC @ 4.5 V | ±12V | 660 pF @ 10 V | - | 1.5W (Ta) | 150°C (TJ) | Surface Mount | 6-MCPH | 6-SMD, Flat Leads | Details |
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