| Mfr Part # | Qty | Price | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
STW45NM60
MOSFET N-CH 650V 45A TO247-3
STMicroelectronics
|
7,798 | 14.67000 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 45A (Tc) | 10V | 110mOhm @ 22.5A, 10V | 5V @ 250µA | 134 nC @ 10 V | ±30V | 3800 pF @ 25 V | - | 417W (Tc) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | Details |
|
IXFA6N120P
MOSFET N-CH 1200V 6A TO263
IXYS
|
103 | 10.31000 | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 6A (Tc) | 10V | 2.4Ohm @ 500mA, 10V | 5V @ 1mA | 92 nC @ 10 V | ±30V | 2830 pF @ 25 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXFA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Details |
|
TK60F10N1L,LXGQ
MOSFET N-CH 100V 60A TO220SM
Toshiba Semiconductor and Storage
|
2,989 | 2.43000 | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 60A (Ta) | 6V, 10V | 6.11mOhm @ 30A, 10V | 3.5V @ 500µA | 60 nC @ 10 V | ±20V | 4320 pF @ 10 V | - | 205W (Tc) | 175°C | Surface Mount | TO-220SM(W) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Details |
|
BUK9Y22-30B,115
MOSFET N-CH 30V 37.7A LFPAK56
Nexperia USA Inc.
|
2 | 0.83000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 37.7A (Tc) | 5V, 10V | 19mOhm @ 20A, 10V | 2V @ 1mA | 10.5 nC @ 5 V | ±15V | 940 pF @ 25 V | - | 59.4W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 | Details |
|
NTD4969N-1G
MOSFET N-CH 30V 41A IPAK-4
onsemi
|
16,847 | 0.19000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 9.4A (Ta), 41A (Tc) | - | 9mOhm @ 30A, 10V | 2.5V @ 250µA | 9 nC @ 4.5 V | - | 837 pF @ 15 V | - | - | - | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | Details |
|
STP35N60M2-EP
MOSFET N-CH 600V TO220
STMicroelectronics
|
5,890 | 3.66560 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 26A (Tc) | - | - | - | - | - | - | - | - | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 | Details |
|
TK20E60W5,S1VX
X35 PB-F POWER MOSFET TRANSISTOR
Toshiba Semiconductor and Storage
|
893 | 3.35000 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Ta) | 10V | 175mOhm @ 10A, 10V | 4.5V @ 1mA | 55 nC @ 10 V | ±30V | 1800 pF @ 300 V | - | 165W (Tc) | 150°C | Through Hole | TO-220 | TO-220-3 | Details |
|
NVMFS5C420NLT1G
POWER MOSFET, SINGLE, N-CHANNEL,
onsemi
|
9,726 | 3.42000 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 45A (Ta), 277A (Tc) | 4.5V, 10V | 1mOhm @ 50A, 10V | 2.2V @ 200µA | 100 nC @ 10 V | ±20V | 7020 pF @ 20 V | - | 3.8W (Ta), 146W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads | Details |
|
2SK2570ZL-TL-E
N-CHANNEL POWER MOSFET
Renesas Electronics America Inc
|
54,000 | 0.32000 | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Details |
|
IRF830BPBF-BE3
MOSFET N-CH 500V 5.3A TO220AB
Vishay Siliconix
|
843 | 1.17000 | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 5.3A (Tc) | - | 1.5Ohm @ 2.5A, 10V | 5V @ 250µA | 20 nC @ 10 V | ±30V | 325 pF @ 100 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 | Details |
|
PH8030L,115
MOSFET N-CH 30V 76.7A LFPAK56
NXP USA Inc.
|
7,519 | 0.24000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 76.7A (Tc) | 4.5V, 10V | 5.9mOhm @ 25A, 10V | 2.15V @ 1mA | 15.2 nC @ 4.5 V | ±20V | 2260 pF @ 12 V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 | Details |
|
NVTFS5C478NLWFTAG
MOSFET N-CHANNEL 40V 26A 8WDFN
onsemi
|
4,565 | 1.34000 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 26A (Tc) | 4.5V, 10V | 14mOhm @ 5A, 10V | 2.2V @ 20µA | 3.8 nC @ 4.5 V | ±20V | 400 pF @ 25 V | - | 20W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN | Details |
|
IXTP12N70X2
MOSFET N-CH 700V 12A TO220AB
IXYS
|
1,227 | 4.30500 | Active | N-Channel | MOSFET (Metal Oxide) | 700 V | 12A (Tc) | 10V | 300mOhm @ 6A, 10V | 4.5V @ 250µA | 19 nC @ 10 V | ±30V | 960 pF @ 25 V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 | Details |
|
TK9A65W,S5X
MOSFET N-CH 650V 9.3A TO220SIS
Toshiba Semiconductor and Storage
|
7,873 | 1.97180 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 9.3A (Ta) | 10V | 500mOhm @ 4.6A, 10V | 3.5V @ 350µA | 20 nC @ 10 V | ±30V | 700 pF @ 300 V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack | Details |
|
SUP60030E-GE3
MOSFET N-CH 80V 120A TO220AB
Vishay Siliconix
|
7,391 | 3.21000 | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 120A (Tc) | 7.5V, 10V | 3.4mOhm @ 30A, 10V | 4V @ 250µA | 141 nC @ 10 V | ±20V | 7910 pF @ 40 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 | Details |
|
IXFX120N65X2
MOSFET N-CH 650V 120A PLUS247-3
IXYS
|
4,300 | 24.34000 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 120A (Tc) | 10V | 24mOhm @ 60A, 10V | 5.5V @ 8mA | 225 nC @ 10 V | ±30V | 15500 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 Variant | Details |
|
HUF75945G3
N-CHANNEL POWER MOSFET
Fairchild Semiconductor
|
3,000 | 2.31000 | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 38A (Tc) | 10V | 71mOhm @ 38A, 10V | 4V @ 250µA | 280 nC @ 20 V | ±20V | 4023 pF @ 25 V | - | 310W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AD | TO-247-3 | Details |
|
IRF1010ZPBF
MOSFET N-CH 55V 75A TO220AB
Infineon Technologies
|
143 | 2.30000 | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 10V | 7.5mOhm @ 75A, 10V | 4V @ 250µA | 95 nC @ 10 V | ±20V | 2840 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 | Details |
|
FQP3N30
MOSFET N-CH 300V 3.2A TO220-3
onsemi
|
701 | 1.29000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 300 V | 3.2A (Tc) | 10V | 2.2Ohm @ 1.6A, 10V | 5V @ 250µA | 7 nC @ 10 V | ±30V | 230 pF @ 25 V | - | 55W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | Details |
|
IMW120R060M1HXKSA1
SICFET N-CH 1.2KV 36A TO247-3
Infineon Technologies
|
8,703 | 16.75000 | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 36A (Tc) | 15V, 18V | 78mOhm @ 13A, 18V | 5.7V @ 5.6mA | 31 nC @ 18 V | +23V, -7V | 1060 pF @ 800 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-3-41 | TO-247-3 | Details |
|
SFT1450-TL-H
MOSFET N-CH 40V 21A TP-FA
onsemi
|
220,099 | 0.33000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 21A (Ta) | 10V | 28mOhm @ 10.5A, 10V | 2.6V @ 1mA | 14.4 nC @ 10 V | ±20V | 715 pF @ 20 V | - | 1W (Ta), 23W (Tc) | 150°C (TJ) | Surface Mount | TP-FA | TO-252-3, DPak (2 Leads + Tab), SC-63 | Details |
|
SIHP180N60E-GE3
MOSFET N-CH 600V 19A TO220AB
Vishay Siliconix
|
8,396 | 3.41000 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 19A (Tc) | 10V | 180mOhm @ 9.5A, 10V | 5V @ 250µA | 33 nC @ 10 V | ±30V | 1085 pF @ 100 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 | Details |
|
FDMC7570S
MOSFET N-CH 25V 27A/40A POWER33
onsemi
|
1,303 | 3.02000 | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 27A (Ta), 40A (Tc) | 4.5V, 10V | 2mOhm @ 27A, 10V | 3V @ 1mA | 68 nC @ 10 V | ±20V | 4410 pF @ 13 V | - | 2.3W (Ta), 59W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | Power33 | 8-PowerTDFN | Details |
|
NDH832P
MOSFET P-CH 20V 4.2A SUPERSOT8
Fairchild Semiconductor
|
73,243 | 0.34000 | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 4.2A (Ta) | 2.7V, 4.5V | 60mOhm @ 4.2A, 4.5V | 1V @ 250µA | 30 nC @ 4.5 V | -8V | 1000 pF @ 10 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT™-8 | 8-TSOP (0.130", 3.30mm Width) | Details |
Submit your RFQ and our team will source it for you.