TK60F10N1L,LXGQ - Toshiba Semiconductor and Storage - Transistors - FETs, MOSFETs - Single
REF: TK60F10N1L,LXGQ Toshiba Semiconductor and Storage
TK60F10N1L,LXGQ

Toshiba Semiconductor and Storage

MOSFET N-CH 100V 60A TO220SM

TK60F10N1L,LXGQ is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N-CH 100V 60A TO220SM. Key specifications: mounting type Surface Mount, operating temperature 175°C, package / case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.

In Stock: 2,989

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C60A (Ta)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs6.11mOhm @ 30A, 10V
Vgs(th) (Max) @ Id3.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs60 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4320 pF @ 10 V
FET Feature-
Power Dissipation (Max)205W (Tc)
Operating Temperature175°C
Mounting TypeSurface Mount
Supplier Device PackageTO-220SM(W)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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