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Diodes - Rectifiers - Single

47,406 parts
Mfr Part # Qty Price Product Status Diode Type Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Mounting Type Package / Case Supplier Device Package Operating Temperature - Junction
ESH3C-E3/57T ESH3C-E3/57T
DIODE GEN PURP 150V 3A DO214AB
Vishay General Semiconductor - Diodes Division
 4,045 0.32080 Active Standard 150 V 3A 900 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 40 ns 5 µA @ 150 V - Surface Mount DO-214AB, SMC DO-214AB (SMC) -55°C ~ 175°C Details
VS-20ETF10S-M3 VS-20ETF10S-M3
DIODE GEN PURP 1KV 20A TO263AB
Vishay General Semiconductor - Diodes Division
 1,914 1.56320 Active Standard 1000 V 20A 1.31 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 400 ns 100 µA @ 1000 V - Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263AB (D²PAK) -40°C ~ 150°C Details
SK1840D2 SK1840D2
SCHOTTKY D2PAK 40V 18A
Diotec Semiconductor
 5,000 0.63050 Active Schottky 40 V 18A 580 mV @ 18 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 40 V - Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263AB (D²PAK) -50°C ~ 150°C Details
IMBD4448-E3-08 IMBD4448-E3-08
DIODE GEN PURP 75V 150MA SOT23
Vishay General Semiconductor - Diodes Division
 5,174 0.04110 Active Standard 75 V 150mA 1 V @ 10 mA Small Signal =< 200mA (Io), Any Speed 4 ns 2.5 µA @ 70 V - Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 150°C (Max) Details
BYWB29-150-E3/81 BYWB29-150-E3/81
DIODE GEN PURP 150V 8A TO263AB
Vishay General Semiconductor - Diodes Division
 1,624 0.84540 Active Standard 150 V 8A 1.3 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 10 µA @ 150 V - Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263AB (D²PAK) -65°C ~ 150°C Details
DSEI8-06AS-TRL DSEI8-06AS-TRL
DIODE GEN PURP 600V 8A TO263AB
IXYS
 6,163 1.01240 Active Standard 600 V 8A 1.5 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 20 µA @ 600 V - Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263AA -40°C ~ 150°C Details
ES2HA R3G ES2HA R3G
DIODE GEN PURP 500V 2A DO214AC
Taiwan Semiconductor Corporation
 3,072 0.77000 Discontinued at Digi-Key Standard 500 V 2A 1.7 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 500 V 20pF @ 4V, 1MHz Surface Mount DO-214AC, SMA DO-214AC (SMA) -55°C ~ 150°C Details
IDH10SG60CXKSA2 IDH10SG60CXKSA2
DIODE SCHOTTKY 600V 10A TO220-2
Infineon Technologies
 4,791 7.12000 Active Silicon Carbide Schottky 600 V 10A (DC) 2.1 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 90 µA @ 600 V 290pF @ 1V, 1MHz Through Hole TO-220-2 PG-TO220-2-1 -55°C ~ 175°C Details
STPS3150RL STPS3150RL
DIODE SCHOTTKY 150V 3A DO201AD
STMicroelectronics
 85 0.71000 Active Schottky 150 V 3A 820 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 2 µA @ 150 V - Through Hole DO-201AD, Axial DO-201AD 175°C (Max) Details
IDH04G65C5XKSA2 IDH04G65C5XKSA2
DIODE SCHOTTKY 650V 4A TO220-2-1
Infineon Technologies
 4,500 2.56000 Active Silicon Carbide Schottky 650 V 4A (DC) 1.7 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 70 µA @ 650 V 130pF @ 1V, 1MHz Through Hole TO-220-2 PG-TO220-2-1 -55°C ~ 175°C Details
CSHD10-45L TR13 PBFREE CSHD10-45L TR13 PBFREE
DIODE SCHOTTKY 45V 10A DPAK
Central Semiconductor Corp
 6,582 1.01000 Active Schottky 45 V 10A 750 mV @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 45 V - Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK -65°C ~ 150°C Details
MB2H60AL_R1_00001 MB2H60AL_R1_00001
ULTRA LOW IR SCHOTTKY BARRIER RE
Panjit International Inc.
 5,883 0.43000 Active Schottky 60 V 2A 750 mV @ 2 A Fast Recovery =< 500ns, > 200mA (Io) - 3 µA @ 60 V 100pF @ 4V, 1MHz Surface Mount SOD-123F SOD-123FL -55°C ~ 175°C Details
NRTS860PFST3G NRTS860PFST3G
DIODE SCHOTTKY 8A 60V TO277-3
onsemi
 9,245 0.37870 Active Schottky 60 V 8A 640 mV @ 8 A Fast Recovery =< 500ns, > 200mA (Io) - 70 µA @ 60 V 870pF @ 1V, 1MHz Surface Mount TO-277, 3-PowerDFN TO-277-3 -55°C ~ 175°C Details
SSB44HR5G SSB44HR5G
DIODE SCHOTTKY 40V 4A DO214AA
Taiwan Semiconductor Corporation
 908 0.65000 Discontinued at Digi-Key Schottky 40 V 4A 500 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) - 200 µA @ 40 V 235pF @ 4V, 1MHz Surface Mount DO-214AA, SMB DO-214AA (SMB) -55°C ~ 150°C Details
MURS240HE3_A/I MURS240HE3_A/I
DIODE GEN PURP 400V 2A DO214AA
Vishay General Semiconductor - Diodes Division
 6,849 0.15690 Active Standard 400 V 2A 1.45 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 5 µA @ 400 V - Surface Mount DO-214AA, SMB DO-214AA (SMB) -65°C ~ 175°C Details
NSVRB521S30T1G NSVRB521S30T1G
DIODE SCHOTTKY 30V 200MA SOD523
onsemi
 6,549 0.40000 Active Schottky 30 V 200mA (DC) 500 mV @ 200 mA Small Signal =< 200mA (Io), Any Speed - 30 µA @ 10 V - Surface Mount SC-79, SOD-523 SOD-523 -55°C ~ 125°C Details
SK1050D2 SK1050D2
SCHOTTKY D2PAK 50V 10A
Diotec Semiconductor
 5,000 0.56190 Active Schottky 50 V 10A 700 mV @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 120 µA @ 50 V - Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263AB (D²PAK) -50°C ~ 150°C Details
CDBA3200LR-HF CDBA3200LR-HF
DIODE SCHOTTKY 200V 3A DO214AC
Comchip Technology
 8,838 0.19720 Active Schottky 200 V 3A 850 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 200 V 250pF @ 4V, 1MHz Surface Mount DO-214AC, SMA DO-214AC (SMA) -50°C ~ 175°C Details
BAS516HE3-TP BAS516HE3-TP
150MW SWITCHING DIODES SOD-523
Micro Commercial Co
 5,312 0.29000 Active Standard 100 V 250mA 1.25 V @ 150 mA Fast Recovery =< 500ns, > 200mA (Io) 4 ns 1 µA @ 75 V 1pF @ 0V, 1MHz Surface Mount SC-79, SOD-523 SOD-523 -55°C ~ 150°C Details
VS-CPU6006L-N3 VS-CPU6006L-N3
DIODE GEN PURP 600V 30A TO247AD
Vishay General Semiconductor - Diodes Division
 4,233 2.92000 Active Standard 600 V 30A 1.75 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 42 ns 30 µA @ 600 V - Through Hole TO-247-3 TO-247AD -55°C ~ 175°C Details
BAT54-HE3-18 BAT54-HE3-18
DIODE SCHOTTKY 30V 200MA SOT23
Vishay General Semiconductor - Diodes Division
 18,747 0.32000 Active Schottky 30 V 200mA (DC) 800 mV @ 100 mA Small Signal =< 200mA (Io), Any Speed 5 ns 2 µA @ 25 V 10pF @ 1V, 1MHz Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 125°C (Max) Details
UG4B-E3/54 UG4B-E3/54
DIODE GEN PURP 100V 4A DO201AD
Vishay General Semiconductor - Diodes Division
 7,300 0.24450 Active Standard 100 V 4A 950 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 100 V 20pF @ 4V, 1MHz Through Hole DO-201AD, Axial DO-201AD -55°C ~ 150°C Details
16FR100 16FR100
16 AMP SILCON RECTIFIER DO4 AK
Solid State Inc.
 8,050 1.66700 Active Standard 1000 V 16A 1.2 V @ 16 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 1000 V - Stud Mount DO-203AA, DO-4, Stud DO-4 -65°C ~ 150°C Details
BAT54QB-QZ BAT54QB-QZ
BAT54QB-Q/SOT8015/DFN1110D-3
Nexperia USA Inc.
 5,000 0.27000 Active Schottky 30 V 200mA (DC) 800 mV @ 100 mA Small Signal =< 200mA (Io), Any Speed 5 ns 2 µA @ 25 V 10pF @ 1V, 1MHz Surface Mount, Wettable Flank 3-XDFN Exposed Pad DFN1110D-3 150°C Details

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