Diodes - Rectifiers - Single

47,406 parts
Mfr Part # Qty Price Product Status Diode Type Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Mounting Type Package / Case Supplier Device Package Operating Temperature - Junction
1N5187US 1N5187US
DIODE GEN PURP 200V 3A AXIAL
Microchip Technology
1,194 8.89500 Active Standard 200 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 2 µA @ 200 V - Through Hole B, Axial - -65°C ~ 175°C Details
CDLL5817 CDLL5817
DIODE SCHOTTKY 20V 1A DO213AB
Microchip Technology
1,259 6.63000 Active Schottky 20 V 1A 600 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 20 V - Surface Mount DO-213AB, MELF DO-213AB -55°C ~ 125°C Details
SE30DT12HM3/I SE30DT12HM3/I
1200V 30A SURFACE-MOUNT HIGH VOL
Vishay General Semiconductor - Diodes Division
8,573 2.47000 Active Standard 1200 V 30A (DC) 1.29 V @ 30 A Standard Recovery >500ns, > 200mA (Io) 3.4 µs 10 µA @ 1200 V 132pF @ 4V, 1MHz Surface Mount TO-263-3, D²Pak (2 Leads + Tab) Variant SMPD -55°C ~ 175°C Details
VS-40HFR140 VS-40HFR140
DIODE GEN PURP 1.4KV 40A DO203AB
Vishay General Semiconductor - Diodes Division
1,136 11.43000 Active Standard, Reverse Polarity 1400 V 40A 1.5 V @ 125 A Standard Recovery >500ns, > 200mA (Io) - 4.5 mA @ 1400 V - Chassis, Stud Mount DO-203AB, DO-5, Stud DO-203AB (DO-5) -65°C ~ 160°C Details
VSKY02300603-G4-08 VSKY02300603-G4-08
DIODE SCHTKY 30V 200MA CLP06032M
Vishay General Semiconductor - Diodes Division
3,628 0.36000 Active Schottky 30 V 200mA (DC) 500 mV @ 200 mA Small Signal =< 200mA (Io), Any Speed - 10 µA @ 30 V 33pF @ 0V, 1MHz Surface Mount 0201 (0603 Metric) CLP0603-2M 150°C (Max) Details
UF600M UF600M
DIODE UFR D8X7.5 1000V 6A
Diotec Semiconductor
48,000 0.34310 Active Standard 1000 V 6A 1.7 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 100 ns 10 µA @ 1000 V - Through Hole P600, Axial P600 -50°C ~ 175°C Details
GAP3SLT33-214 GAP3SLT33-214
DIODE SCHOTTKY 3.3KV 300MA DO214
GeneSiC Semiconductor
3,818 11.83000 Active Silicon Carbide Schottky 3300 V 300mA (DC) 2.2 V @ 300 mA No Recovery Time > 500mA (Io) 0 ns 10 µA @ 3300 V 42pF @ 1V, 1MHz Surface Mount DO-214AA, SMB DO-214AA -55°C ~ 175°C Details
SFT18GH SFT18GH
DIODE GEN PURP 600V 1A TS-1
Taiwan Semiconductor Corporation
9,769 0.12450 Active Standard 600 V 1A 1.7 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 5 µA @ 600 V 10pF @ 4V, 1MHz Through Hole T-18, Axial TS-1 -55°C ~ 150°C Details
MB310_R1_00001 MB310_R1_00001
SMC, SKY
Panjit International Inc.
935 0.49000 Active Schottky 100 V 3A 800 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 50 µA @ 100 V 140pF @ 4V, 1MHz Surface Mount DO-214AB, SMC SMC (DO-214AB) -65°C ~ 175°C Details
HSM2838CTR HSM2838CTR
DIODE FOR HIGH SPEED SWITCHING
Renesas Electronics America Inc
7,049 0.14000 Active - - - - - - - - - - - - Details
VS-C4PH6006L-N3 VS-C4PH6006L-N3
DIODE GEN PURP 600V 30A TO247AD
Vishay General Semiconductor - Diodes Division
3,739 2.47000 Active Standard 600 V 30A 2 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 55 ns 50 µA @ 600 V - Through Hole TO-247-3 TO-247AD -55°C ~ 175°C Details
G3S06505H G3S06505H
SIC SCHOTTKY DIODE 650V 5A 2-PIN
Global Power Technology-GPT
2,082 3.56000 Active Silicon Carbide Schottky 650 V 15.4A (DC) 1.7 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 424pF @ 0V, 1MHz Through Hole TO-220-2 Full Pack TO-220F -55°C ~ 175°C Details
MBR19AFC_R1_00001 MBR19AFC_R1_00001
SURFACE MOUNT SCHOTTKY BARRIER R
Panjit International Inc.
1,948 0.43000 Active Schottky 90 V 1A 800 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 50 µA @ 90 V 50pF @ 4V, 1MHz Surface Mount DO-221AC, SMA Flat Leads SMAF-C -55°C ~ 150°C Details
SE10FD-M3/H SE10FD-M3/H
DIODE GEN PURP 200V 1A DO219AB
Vishay General Semiconductor - Diodes Division
5 0.53000 Active Standard 200 V 1A 1.05 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 780 ns 5 µA @ 200 V 7.5pF @ 4V, 1MHz Surface Mount DO-219AB DO-219AB (SMF) -55°C ~ 175°C Details
MURS160-E3/52T MURS160-E3/52T
DIODE GEN PURP 600V 2A DO214AA
Vishay General Semiconductor - Diodes Division
2,349 0.53000 Active Standard 600 V 2A 1.25 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 5 µA @ 600 V 10pF @ 4V, 1MHz Surface Mount DO-214AA, SMB DO-214AA (SMB) -65°C ~ 175°C Details
SMBD1466LT1 SMBD1466LT1
SS SOT23 SWCH DIO SPCL
onsemi
234,000 0.02000 Active - - - - - - - - - - - - Details
1N645-1E3/TR 1N645-1E3/TR
SIGNAL/COMPUTER DIODE
Microchip Technology
4,425 1.63500 Active Standard 225 V 400mA 1 V @ 400 mA Standard Recovery >500ns, > 200mA (Io) - 50 nA @ 225 V - Through Hole DO-204AH, DO-35, Axial DO-35 (DO-204AH) -65°C ~ 175°C Details
1N4448TAP 1N4448TAP
DIODE GEN PURP 75V 150MA DO35
Vishay General Semiconductor - Diodes Division
37,521 0.16000 Active Standard 75 V 150mA 720 mV @ 5 mA Small Signal =< 200mA (Io), Any Speed 8 ns 5 µA @ 75 V 4pF @ 0V, 1MHz Through Hole DO-204AH, DO-35, Axial DO-35 (DO-204AH) 175°C (Max) Details
CDBF00340 CDBF00340
DIODE SCHOTTKY 40V 30MA 1005
Comchip Technology
8,724 0.40000 Active Schottky 40 V 30mA 370 mV @ 1 mA Small Signal =< 200mA (Io), Any Speed - 1 µA @ 40 V 1.5pF @ 1V, 1MHz Surface Mount 1005 (2512 Metric) 1005/SOD-323F 125°C (Max) Details
S5M-Q-CT S5M-Q-CT
CUT-TAPE VERSION. STANDARD RECO
Diotec Semiconductor
2,974 2.33800 Active Standard 1000 V 8A 1.1 V @ 5 A Standard Recovery >500ns, > 200mA (Io) 1.5 µs 10 µA @ 1 kV - Surface Mount DO-214AB, SMC SMC (DO-214AB) -50°C ~ 150°C Details
MBRB745 MBRB745
DIODE SCHOTTKY 45V 7.5A D2PAK
SMC Diode Solutions
6,312 0.26430 Active Schottky 45 V 7.5A 840 mV @ 15 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 45 V 400pF @ 5V, 1MHz Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK -55°C ~ 150°C Details
SS22L RVG SS22L RVG
DIODE SCHOTTKY 20V 2A SUB SMA
Taiwan Semiconductor Corporation
7,305 0.64000 Active Schottky 20 V 2A 500 mV @ 2 A Fast Recovery =< 500ns, > 200mA (Io) - 400 µA @ 20 V - Surface Mount DO-219AB Sub SMA -55°C ~ 125°C Details
ST1K ST1K
DIODE STD SMA 800V 1A
Diotec Semiconductor
7,500 0.01850 Active Standard 800 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 1.5 µs 5 µA @ 800 V - Surface Mount DO-214AC, SMA DO-214AC, SMA -50°C ~ 150°C Details
1N5819HW-7-F 1N5819HW-7-F
DIODE SCHOTTKY 40V 1A SOD123
Diodes Incorporated
6,850 0.46000 Active Schottky 40 V 1A 450 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 40 V 60pF @ 4V, 1MHz Surface Mount SOD-123 SOD-123 -65°C ~ 125°C Details

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