VS-FC80NA20 - Vishay General Semiconductor - Diodes Division - Transistors - FETs, MOSFETs - Single
REF: VS-FC80NA20 Vishay General Semiconductor - Diodes Division
VS-FC80NA20

Vishay General Semiconductor - Diodes Division

MOSFET N-CH 200V 108A SOT227

VS-FC80NA20 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay General Semiconductor - Diodes Division. MOSFET N-CH 200V 108A SOT227. Key specifications: mounting type Chassis Mount, operating temperature -55°C ~ 175°C (TJ), package / case SOT-227-4, miniBLOC.

In Stock: 3,775

Specifications

17 parameters
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C108A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs14mOhm @ 80A, 10V
Vgs(th) (Max) @ Id5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs161 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds10720 pF @ 50 V
FET Feature-
Power Dissipation (Max)405W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSOT-227
Package / CaseSOT-227-4, miniBLOC

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