Name: VS-FB190SA10
Brand: Vishay General Semiconductor - Diodes Division
SKU: VS-FB190SA10
Availability: InStock

REF: VS-FB190SA10 Vishay General Semiconductor - Diodes Division

VS-FB190SA10

Vishay General Semiconductor - Diodes Division

MOSFET N-CH 100V 190A SOT227

VS-FB190SA10 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay General Semiconductor - Diodes Division. MOSFET N-CH 100V 190A SOT227. Key specifications: mounting type Chassis Mount, operating temperature -55°C ~ 150°C (TJ), package / case SOT-227-4, miniBLOC.

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In Stock: 8,755

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	190A (Tj)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	6.5mOhm @ 180A, 10V
Vgs(th) (Max) @ Id	4.35V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	250 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	10700 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	568W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Supplier Device Package	SOT-227
Package / Case	SOT-227-4, miniBLOC