Name: UF3C120080B7S
Brand: UnitedSiC
SKU: UF3C120080B7S
Price: 14.09 USD
Availability: InStock

REF: UF3C120080B7S UnitedSiC

UF3C120080B7S

SICFET P-CH 1200V 28.8A D2PAK-7

UF3C120080B7S is a Transistors - FETs, MOSFETs - Single manufactured by UnitedSiC. SICFET P-CH 1200V 28.8A D2PAK-7. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA.

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In Stock: 1,811

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	SiCFET (Cascode SiCJFET)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	28.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	105mOhm @ 20A, 12V
Vgs(th) (Max) @ Id	6V @ 10mA
Gate Charge (Qg) (Max) @ Vgs	23 nC @ 12 V

Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	754 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	190W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D2PAK-7
Package / Case	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA