Name: TPH3208PD
Brand: Transphorm
SKU: TPH3208PD
Availability: InStock

REF: TPH3208PD Transphorm

TPH3208PD

GANFET N-CH 650V 20A TO220AB

TPH3208PD is a Transistors - FETs, MOSFETs - Single manufactured by Transphorm. GANFET N-CH 650V 20A TO220AB. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C, package / case TO-220-3.

Datasheet Request a Quote

In Stock: 2,636

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	130mOhm @ 13A, 8V
Vgs(th) (Max) @ Id	2.6V @ 300µA
Gate Charge (Qg) (Max) @ Vgs	14 nC @ 8 V

Vgs (Max)	±18V
Input Capacitance (Ciss) (Max) @ Vds	760 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	96W (Tc)
Operating Temperature	-55°C ~ 150°C
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3