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TPH3208LDG

In Stock: 158
TPH3208LDG - Transphorm - Transistors - FETs, MOSFETs - Single
REF: TPH3208LDG Transphorm
TPH3208LDG

Transphorm

GANFET N-CH 650V 20A 3PQFN

TPH3208LDG is a Transistors - FETs, MOSFETs - Single manufactured by Transphorm. GANFET N-CH 650V 20A 3PQFN. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 3-PowerDFN.

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In Stock: 158

Specifications

17 parameters
Product StatusObsolete
FET TypeN-Channel
TechnologyGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs130mOhm @ 13A, 8V
Vgs(th) (Max) @ Id2.6V @ 300µA
Gate Charge (Qg) (Max) @ Vgs14 nC @ 8 V
Vgs (Max)±18V
Input Capacitance (Ciss) (Max) @ Vds760 pF @ 400 V
FET Feature-
Power Dissipation (Max)96W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package3-PQFN (8x8)
Package / Case3-PowerDFN

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