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TP65H480G4JSG-TR

In Stock: 250
TP65H480G4JSG-TR - Transphorm - Transistors - FETs, MOSFETs - Single
REF: TP65H480G4JSG-TR Transphorm
TP65H480G4JSG-TR

Transphorm

GANFET N-CH 650V 3.6A 3PQFN

TP65H480G4JSG-TR is a Transistors - FETs, MOSFETs - Single manufactured by Transphorm. GANFET N-CH 650V 3.6A 3PQFN. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 3-SMD, Flat Lead.

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In Stock: 250

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyGaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)8V
Rds On (Max) @ Id, Vgs560mOhm @ 3.4A, 8V
Vgs(th) (Max) @ Id2.8V @ 500µA
Gate Charge (Qg) (Max) @ Vgs9 nC @ 8 V
Vgs (Max)±18V
Input Capacitance (Ciss) (Max) @ Vds760 pF @ 400 V
FET Feature-
Power Dissipation (Max)13.2W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package3-PQFN (5x6)
Package / Case3-SMD, Flat Lead

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