Name: TP65H150G4LSG
Brand: Transphorm
SKU: TP65H150G4LSG
Availability: InStock

REF: TP65H150G4LSG Transphorm

TP65H150G4LSG

GAN FET N-CH 650V PQFN

TP65H150G4LSG is a Transistors - FETs, MOSFETs - Single manufactured by Transphorm. GAN FET N-CH 650V PQFN. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 2-PowerTSFN.

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In Stock: 4,441

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	180mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id	4.8V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	8 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	598 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	52W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	2-PQFN (8x8)
Package / Case	2-PowerTSFN