TP65H070LSG - Transphorm - Transistors - FETs, MOSFETs - Single
REF: TP65H070LSG Transphorm
TP65H070LSG

Transphorm

GANFET N-CH 650V 25A 3PQFN

TP65H070LSG is a Transistors - FETs, MOSFETs - Single manufactured by Transphorm. GANFET N-CH 650V 25A 3PQFN. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 3-PowerDFN.

In Stock: 5,275

Specifications

17 parameters
Product StatusDiscontinued at Digi-Key
FET TypeN-Channel
TechnologyGaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs85mOhm @ 16A, 10V
Vgs(th) (Max) @ Id4.8V @ 700µA
Gate Charge (Qg) (Max) @ Vgs9.3 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds600 pF @ 400 V
FET Feature-
Power Dissipation (Max)96W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package3-PQFN (8x8)
Package / Case3-PowerDFN

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