TP65H050WS - Transphorm - Transistors - FETs, MOSFETs - Single
REF: TP65H050WS Transphorm
TP65H050WS

Transphorm

GANFET N-CH 650V 34A TO247-3

TP65H050WS is a Transistors - FETs, MOSFETs - Single manufactured by Transphorm. GANFET N-CH 650V 34A TO247-3. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-247-3.

In Stock: 250

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyGaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C34A (Tc)
Drive Voltage (Max Rds On, Min Rds On)12V
Rds On (Max) @ Id, Vgs60mOhm @ 22A, 10V
Vgs(th) (Max) @ Id4.8V @ 700µA
Gate Charge (Qg) (Max) @ Vgs24 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1000 pF @ 400 V
FET Feature-
Power Dissipation (Max)119W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-3
Package / CaseTO-247-3

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