Name: TP65H050G4BS
Brand: Transphorm
SKU: TP65H050G4BS
Price: 13.65 USD
Availability: InStock

REF: TP65H050G4BS Transphorm

TP65H050G4BS

650 V 34 A GAN FET

TP65H050G4BS is a Transistors - FETs, MOSFETs - Single manufactured by Transphorm. 650 V 34 A GAN FET. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.

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In Stock: 2,208

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	34A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	60mOhm @ 22A, 10V
Vgs(th) (Max) @ Id	4.8V @ 700µA
Gate Charge (Qg) (Max) @ Vgs	24 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1000 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	119W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-263
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB