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XPW6R30ANB,L1XHQ

In Stock: 3,022
XPW6R30ANB,L1XHQ - Toshiba Semiconductor and Storage - Transistors - FETs, MOSFETs - Single
REF: XPW6R30ANB,L1XHQ Toshiba Semiconductor and Storage
XPW6R30ANB,L1XHQ

Toshiba Semiconductor and Storage

MOSFET N-CH 100V 45A 8DSOP

XPW6R30ANB,L1XHQ is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N-CH 100V 45A 8DSOP. Key specifications: mounting type Surface Mount, operating temperature 175°C, package / case 8-PowerVDFN.

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In Stock: 3,022

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C45A (Ta)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs6.3mOhm @ 22.5A, 10V
Vgs(th) (Max) @ Id3.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs52 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3240 pF @ 10 V
FET Feature-
Power Dissipation (Max)960mW (Ta), 132W (Tc)
Operating Temperature175°C
Mounting TypeSurface Mount
Supplier Device Package8-DSOP Advance
Package / Case8-PowerVDFN

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