Name: XPW4R10ANB,L1XHQ
Brand: Toshiba Semiconductor and Storage
SKU: XPW4R10ANB,L1XHQ
Price: 2.43 USD
Availability: InStock

REF: XPW4R10ANB,L1XHQ Toshiba Semiconductor and Storage

XPW4R10ANB,L1XHQ

Toshiba Semiconductor and Storage

MOSFET N-CH 100V 70A AEC-Q101

XPW4R10ANB,L1XHQ is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N-CH 100V 70A AEC-Q101. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C, package / case 8-PowerVDFN.

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In Stock: 8,165

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	70A
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	4.1mOhm @ 35A, 10V
Vgs(th) (Max) @ Id	3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	75 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4970 pF @ 10 V
FET Feature	Standard
Power Dissipation (Max)	170W (Tc)
Operating Temperature	-55°C ~ 175°C
Mounting Type	Surface Mount
Supplier Device Package	8-DSOP Advance
Package / Case	8-PowerVDFN