Name: XPN9R614MC,L1XHQ
Brand: Toshiba Semiconductor and Storage
SKU: XPN9R614MC,L1XHQ
Price: 1.47 USD
Availability: InStock

REF: XPN9R614MC,L1XHQ Toshiba Semiconductor and Storage

XPN9R614MC,L1XHQ

Toshiba Semiconductor and Storage

MOSFET P-CH 40V 40A 8TSON

XPN9R614MC,L1XHQ is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET P-CH 40V 40A 8TSON. Key specifications: mounting type Surface Mount, operating temperature 175°C, package / case 8-PowerVDFN.

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In Stock: 9,210

Specifications

17 parameters

Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	40A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	9.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.1V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	64 nC @ 10 V

Vgs (Max)	+10V, -20V
Input Capacitance (Ciss) (Max) @ Vds	3000 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	840mW (Ta), 100W (Tc)
Operating Temperature	175°C
Mounting Type	Surface Mount
Supplier Device Package	8-TSON Advance-WF (3.1x3.1)
Package / Case	8-PowerVDFN