XPN7R104NC,L1XHQ - Toshiba Semiconductor and Storage - Transistors - FETs, MOSFETs - Single
REF: XPN7R104NC,L1XHQ Toshiba Semiconductor and Storage
XPN7R104NC,L1XHQ

Toshiba Semiconductor and Storage

MOSFET N-CH 40V 20A 8TSON

XPN7R104NC,L1XHQ is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N-CH 40V 20A 8TSON. Key specifications: mounting type Surface Mount, operating temperature 175°C, package / case 8-PowerVDFN.

In Stock: 3,691

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40 V
Current - Continuous Drain (Id) @ 25°C20A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs7.1mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs21 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1290 pF @ 10 V
FET Feature-
Power Dissipation (Max)840mW (Ta), 65W (Tc)
Operating Temperature175°C
Mounting TypeSurface Mount
Supplier Device Package8-TSON Advance-WF (3.1x3.1)
Package / Case8-PowerVDFN

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