XPN6R706NC,L1XHQ - Toshiba Semiconductor and Storage - Transistors - FETs, MOSFETs - Single
REF: XPN6R706NC,L1XHQ Toshiba Semiconductor and Storage
XPN6R706NC,L1XHQ

Toshiba Semiconductor and Storage

MOSFET N-CH 60V 40A 8TSON

XPN6R706NC,L1XHQ is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N-CH 60V 40A 8TSON. Key specifications: mounting type Surface Mount, operating temperature 175°C, package / case 8-PowerVDFN.

In Stock: 6,062

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C40A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs6.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.5V @ 300µA
Gate Charge (Qg) (Max) @ Vgs35 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2000 pF @ 10 V
FET Feature-
Power Dissipation (Max)840mW (Ta), 100W (Tc)
Operating Temperature175°C
Mounting TypeSurface Mount
Supplier Device Package8-TSON Advance-WF (3.1x3.1)
Package / Case8-PowerVDFN

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