Name: TW070J120B,S1Q
Brand: Toshiba Semiconductor and Storage
SKU: TW070J120B,S1Q
Price: 33.97 USD
Availability: InStock

REF: TW070J120B,S1Q Toshiba Semiconductor and Storage

TW070J120B,S1Q

Toshiba Semiconductor and Storage

SICFET N-CH 1200V 36A TO3P

TW070J120B,S1Q is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. SICFET N-CH 1200V 36A TO3P. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C, package / case TO-3P-3, SC-65-3.

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In Stock: 125

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	20V
Rds On (Max) @ Id, Vgs	90mOhm @ 18A, 20V
Vgs(th) (Max) @ Id	5.8V @ 20mA
Gate Charge (Qg) (Max) @ Vgs	67 nC @ 20 V

Vgs (Max)	±25V, -10V
Input Capacitance (Ciss) (Max) @ Vds	1680 pF @ 800 V
FET Feature	Standard
Power Dissipation (Max)	272W (Tc)
Operating Temperature	-55°C ~ 175°C
Mounting Type	Through Hole
Supplier Device Package	TO-3P(N)
Package / Case	TO-3P-3, SC-65-3