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TW048N65C,S1F

In Stock: 180
TW048N65C,S1F - Toshiba Semiconductor and Storage - Transistors - FETs, MOSFETs - Single
REF: TW048N65C,S1F Toshiba Semiconductor and Storage
TW048N65C,S1F

Toshiba Semiconductor and Storage

G3 650V SIC-MOSFET TO-247 48MOH

TW048N65C,S1F is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. G3 650V SIC-MOSFET TO-247 48MOH. Key specifications: mounting type Through Hole, operating temperature 175°C, package / case TO-247-3.

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In Stock: 180

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)18V
Rds On (Max) @ Id, Vgs65mOhm @ 20A, 18V
Vgs(th) (Max) @ Id5V @ 1.6mA
Gate Charge (Qg) (Max) @ Vgs41 nC @ 18 V
Vgs (Max)+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds1362 pF @ 400 V
FET Feature-
Power Dissipation (Max)132W (Tc)
Operating Temperature175°C
Mounting TypeThrough Hole
Supplier Device PackageTO-247
Package / CaseTO-247-3

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