Name: TW030N120C,S1F
Brand: Toshiba Semiconductor and Storage
SKU: TW030N120C,S1F
Price: 36.09 USD
Availability: InStock

REF: TW030N120C,S1F Toshiba Semiconductor and Storage

TW030N120C,S1F

Toshiba Semiconductor and Storage

G3 1200V SIC-MOSFET TO-247 30MO

TW030N120C,S1F is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. G3 1200V SIC-MOSFET TO-247 30MO. Key specifications: mounting type Through Hole, operating temperature 175°C, package / case TO-247-3.

Datasheet Request a Quote

In Stock: 175

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V
Rds On (Max) @ Id, Vgs	40mOhm @ 30A, 18V
Vgs(th) (Max) @ Id	5V @ 13mA
Gate Charge (Qg) (Max) @ Vgs	82 nC @ 18 V

Vgs (Max)	+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds	2925 pF @ 800 V
FET Feature	-
Power Dissipation (Max)	249W (Tc)
Operating Temperature	175°C
Mounting Type	Through Hole
Supplier Device Package	TO-247
Package / Case	TO-247-3