Name: TW015N120C,S1F
Brand: Toshiba Semiconductor and Storage
SKU: TW015N120C,S1F
Price: 71.28 USD
Availability: InStock

REF: TW015N120C,S1F Toshiba Semiconductor and Storage

TW015N120C,S1F

Toshiba Semiconductor and Storage

G3 1200V SIC-MOSFET TO-247 15MO

TW015N120C,S1F is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. G3 1200V SIC-MOSFET TO-247 15MO. Key specifications: mounting type Through Hole, operating temperature 175°C, package / case TO-247-3.

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In Stock: 180

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V
Rds On (Max) @ Id, Vgs	20mOhm @ 50A, 18V
Vgs(th) (Max) @ Id	5V @ 11.7mA
Gate Charge (Qg) (Max) @ Vgs	158 nC @ 18 V

Vgs (Max)	+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds	6000 pF @ 800 V
FET Feature	-
Power Dissipation (Max)	431W (Tc)
Operating Temperature	175°C
Mounting Type	Through Hole
Supplier Device Package	TO-247
Package / Case	TO-247-3