Name: TPW4R50ANH,L1Q
Brand: Toshiba Semiconductor and Storage
SKU: TPW4R50ANH,L1Q
Price: 2.66 USD
Availability: InStock

REF: TPW4R50ANH,L1Q Toshiba Semiconductor and Storage

TPW4R50ANH,L1Q

Toshiba Semiconductor and Storage

MOSFET N-CH 100V 92A 8DSOP

TPW4R50ANH,L1Q is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N-CH 100V 92A 8DSOP. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case 8-PowerWDFN.

Datasheet Request a Quote

In Stock: 5,727

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	92A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	4.5mOhm @ 46A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	58 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5200 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	800mW (Ta), 142W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-DSOP Advance
Package / Case	8-PowerWDFN