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TPW1R306PL,L1Q

In Stock: 9,948
TPW1R306PL,L1Q - Toshiba Semiconductor and Storage - Transistors - FETs, MOSFETs - Single
REF: TPW1R306PL,L1Q Toshiba Semiconductor and Storage
TPW1R306PL,L1Q

Toshiba Semiconductor and Storage

MOSFET N-CH 60V 260A 8DSOP

TPW1R306PL,L1Q is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N-CH 60V 260A 8DSOP. Key specifications: mounting type Surface Mount, operating temperature 175°C, package / case 8-PowerWDFN.

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In Stock: 9,948

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C260A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.29mOhm @ 50A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs91 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds8100 pF @ 30 V
FET Feature-
Power Dissipation (Max)960mW (Ta), 170W (Tc)
Operating Temperature175°C
Mounting TypeSurface Mount
Supplier Device Package8-DSOP Advance
Package / Case8-PowerWDFN

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