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TPN7R006PL,L1Q

In Stock: 2,813
TPN7R006PL,L1Q - Toshiba Semiconductor and Storage - Transistors - FETs, MOSFETs - Single
REF: TPN7R006PL,L1Q Toshiba Semiconductor and Storage
TPN7R006PL,L1Q

Toshiba Semiconductor and Storage

MOSFET N-CH 60V 54A 8TSON

TPN7R006PL,L1Q is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N-CH 60V 54A 8TSON. Key specifications: mounting type Surface Mount, operating temperature 175°C, package / case 8-PowerVDFN.

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In Stock: 2,813

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C54A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs7mOhm @ 27A, 10V
Vgs(th) (Max) @ Id2.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs20 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1875 pF @ 30 V
FET Feature-
Power Dissipation (Max)630mW (Ta), 75W (Tc)
Operating Temperature175°C
Mounting TypeSurface Mount
Supplier Device Package8-TSON Advance (3.1x3.1)
Package / Case8-PowerVDFN

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