TPN30008NH,LQ - Toshiba Semiconductor and Storage - Transistors - FETs, MOSFETs - Single
REF: TPN30008NH,LQ Toshiba Semiconductor and Storage
TPN30008NH,LQ

Toshiba Semiconductor and Storage

MOSFET N-CH 80V 9.6A 8TSON

TPN30008NH,LQ is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N-CH 80V 9.6A 8TSON. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case 8-PowerVDFN.

In Stock: 8,151

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80 V
Current - Continuous Drain (Id) @ 25°C9.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs30mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs11 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds920 pF @ 40 V
FET Feature-
Power Dissipation (Max)700mW (Ta), 27W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-TSON Advance (3.3x3.3)
Package / Case8-PowerVDFN

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