TPN2R304PL,L1Q - Toshiba Semiconductor and Storage - Transistors - FETs, MOSFETs - Single
REF: TPN2R304PL,L1Q Toshiba Semiconductor and Storage
TPN2R304PL,L1Q

Toshiba Semiconductor and Storage

MOSFET N-CH 40V 80A 8TSON

TPN2R304PL,L1Q is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N-CH 40V 80A 8TSON. Key specifications: mounting type Surface Mount, operating temperature 175°C, package / case 8-PowerVDFN.

In Stock: 9,587

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40 V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs2.3mOhm @ 40A, 10V
Vgs(th) (Max) @ Id2.4V @ 0.3mA
Gate Charge (Qg) (Max) @ Vgs41 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3600 pF @ 20 V
FET Feature-
Power Dissipation (Max)630mW (Ta), 104W (Tc)
Operating Temperature175°C
Mounting TypeSurface Mount
Supplier Device Package8-TSON Advance (3.1x3.1)
Package / Case8-PowerVDFN

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