Name: TPN22006NH,LQ
Brand: Toshiba Semiconductor and Storage
SKU: TPN22006NH,LQ
Price: 0.91 USD
Availability: InStock

REF: TPN22006NH,LQ Toshiba Semiconductor and Storage

TPN22006NH,LQ

Toshiba Semiconductor and Storage

MOSFET N-CH 60V 9A 8TSON

TPN22006NH,LQ is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N-CH 60V 9A 8TSON. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case 8-PowerVDFN.

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In Stock: 4,991

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	6.5V, 10V
Rds On (Max) @ Id, Vgs	22mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id	4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	710 pF @ 30 V
FET Feature	-
Power Dissipation (Max)	700mW (Ta), 18W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-TSON Advance (3.3x3.3)
Package / Case	8-PowerVDFN