Name: TPN1R603PL,L1Q
Brand: Toshiba Semiconductor and Storage
SKU: TPN1R603PL,L1Q
Price: 0.96 USD
Availability: InStock

REF: TPN1R603PL,L1Q Toshiba Semiconductor and Storage

TPN1R603PL,L1Q

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 80A 8TSON

TPN1R603PL,L1Q is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N-CH 30V 80A 8TSON. Key specifications: mounting type Surface Mount, operating temperature 175°C, package / case 8-PowerVDFN.

Datasheet Request a Quote

In Stock: 5,865

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.6mOhm @ 40A, 10V
Vgs(th) (Max) @ Id	2.1V @ 300µA
Gate Charge (Qg) (Max) @ Vgs	41 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3900 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	104W (Tc)
Operating Temperature	175°C
Mounting Type	Surface Mount
Supplier Device Package	8-TSON Advance (3.1x3.1)
Package / Case	8-PowerVDFN