TPN19008QM,LQ - Toshiba Semiconductor and Storage - Transistors - FETs, MOSFETs - Single
REF: TPN19008QM,LQ Toshiba Semiconductor and Storage
TPN19008QM,LQ

Toshiba Semiconductor and Storage

MOSFET N-CH 80V 34A 8TSON

TPN19008QM,LQ is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N-CH 80V 34A 8TSON. Key specifications: mounting type Surface Mount, operating temperature 175°C, package / case 8-PowerVDFN.

In Stock: 15,898

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80 V
Current - Continuous Drain (Id) @ 25°C34A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs19mOhm @ 17A, 10V
Vgs(th) (Max) @ Id3.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs16 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1400 pF @ 40 V
FET Feature-
Power Dissipation (Max)630mW (Ta), 57W (Tc)
Operating Temperature175°C
Mounting TypeSurface Mount
Supplier Device Package8-TSON Advance (3.1x3.1)
Package / Case8-PowerVDFN

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