TPN11003NL,LQ - Toshiba Semiconductor and Storage - Transistors - FETs, MOSFETs - Single
REF: TPN11003NL,LQ Toshiba Semiconductor and Storage
TPN11003NL,LQ

Toshiba Semiconductor and Storage

MOSFET N CH 30V 11A 8TSON-ADV

TPN11003NL,LQ is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N CH 30V 11A 8TSON-ADV. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case 8-PowerVDFN.

In Stock: 1,995

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs11mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id2.3V @ 100µA
Gate Charge (Qg) (Max) @ Vgs7.5 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds660 pF @ 15 V
FET Feature-
Power Dissipation (Max)700mW (Ta), 19W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-TSON Advance (3.1x3.1)
Package / Case8-PowerVDFN

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