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TPH8R80ANH,L1Q

In Stock: 3,147
TPH8R80ANH,L1Q - Toshiba Semiconductor and Storage - Transistors - FETs, MOSFETs - Single
REF: TPH8R80ANH,L1Q Toshiba Semiconductor and Storage
TPH8R80ANH,L1Q

Toshiba Semiconductor and Storage

MOSFET N CH 100V 32A 8-SOP

TPH8R80ANH,L1Q is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N CH 100V 32A 8-SOP. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case 8-PowerVDFN.

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In Stock: 3,147

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs8.8mOhm @ 16A, 10V
Vgs(th) (Max) @ Id4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs33 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2800 pF @ 50 V
FET Feature-
Power Dissipation (Max)1.6W (Ta), 61W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOP Advance (5x5)
Package / Case8-PowerVDFN

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