Name: TPH6R30ANL,L1Q
Brand: Toshiba Semiconductor and Storage
SKU: TPH6R30ANL,L1Q
Price: 0.45 USD
Availability: InStock

REF: TPH6R30ANL,L1Q Toshiba Semiconductor and Storage

TPH6R30ANL,L1Q

Toshiba Semiconductor and Storage

MOSFET N-CH 100V 66A/45A 8SOP

TPH6R30ANL,L1Q is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N-CH 100V 66A/45A 8SOP. Key specifications: mounting type Surface Mount, operating temperature 150°C, package / case 8-PowerVDFN.

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In Stock: 5,814

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	66A (Ta), 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	6.3mOhm @ 22.5A, 10V
Vgs(th) (Max) @ Id	2.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	55 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4300 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 54W (Tc)
Operating Temperature	150°C
Mounting Type	Surface Mount
Supplier Device Package	8-SOP Advance (5x5)
Package / Case	8-PowerVDFN