TPH4R50ANH1,LQ - Toshiba Semiconductor and Storage - Transistors - FETs, MOSFETs - Single
REF: TPH4R50ANH1,LQ Toshiba Semiconductor and Storage
TPH4R50ANH1,LQ

Toshiba Semiconductor and Storage

MOSFET 100V 4.5MOHM SOP-ADV(N)

TPH4R50ANH1,LQ is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET 100V 4.5MOHM SOP-ADV(N). Key specifications: mounting type Surface Mount, operating temperature 150°C, package / case 8-PowerTDFN.

In Stock: 2,537

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C92A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.5mOhm @ 46A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs58 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5200 pF @ 50 V
FET Feature-
Power Dissipation (Max)800mW (Ta)
Operating Temperature150°C
Mounting TypeSurface Mount
Supplier Device Package8-SOP Advance (5x5.75)
Package / Case8-PowerTDFN

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