TPH4R10ANL,L1Q - Toshiba Semiconductor and Storage - Transistors - FETs, MOSFETs - Single
REF: TPH4R10ANL,L1Q Toshiba Semiconductor and Storage
TPH4R10ANL,L1Q

Toshiba Semiconductor and Storage

MOSFET N-CH 100V 92A/70A 8SOP

TPH4R10ANL,L1Q is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N-CH 100V 92A/70A 8SOP. Key specifications: mounting type Surface Mount, operating temperature 150°C, package / case 8-PowerVDFN.

In Stock: 9,890

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C92A (Ta), 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs4.1mOhm @ 35A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs75 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6300 pF @ 50 V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 67W (Tc)
Operating Temperature150°C
Mounting TypeSurface Mount
Supplier Device Package8-SOP Advance (5x5)
Package / Case8-PowerVDFN

Need a Quote for TPH4R10ANL,L1Q?

Submit your RFQ and get a quote within 24 hours.

Need components fast? Get pricing & lead time within 24 hours. Submit an RFQ →