Name: TPH1R712MD,L1Q
Brand: Toshiba Semiconductor and Storage
SKU: TPH1R712MD,L1Q
Price: 1.42 USD
Availability: InStock

REF: TPH1R712MD,L1Q Toshiba Semiconductor and Storage

TPH1R712MD,L1Q

Toshiba Semiconductor and Storage

MOSFET P-CH 20V 60A 8SOP

TPH1R712MD,L1Q is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET P-CH 20V 60A 8SOP. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case 8-PowerVDFN.

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In Stock: 7,726

Specifications

17 parameters

Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	1.7mOhm @ 30A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	182 nC @ 5 V

Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	10900 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	78W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SOP Advance (5x5)
Package / Case	8-PowerVDFN