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TPH1R306PL1,LQ

In Stock: 6,017
TPH1R306PL1,LQ - Toshiba Semiconductor and Storage - Transistors - FETs, MOSFETs - Single
REF: TPH1R306PL1,LQ Toshiba Semiconductor and Storage
TPH1R306PL1,LQ

Toshiba Semiconductor and Storage

UMOS9 SOP-ADV(N) PD=170W F=1MHZ

TPH1R306PL1,LQ is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. UMOS9 SOP-ADV(N) PD=170W F=1MHZ. Key specifications: mounting type Surface Mount, operating temperature 175°C, package / case 8-PowerTDFN.

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In Stock: 6,017

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.34mOhm @ 50A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs91 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds8100 pF @ 30 V
FET Feature-
Power Dissipation (Max)960mW (Ta), 210W (Tc)
Operating Temperature175°C
Mounting TypeSurface Mount
Supplier Device Package8-SOP Advance (5x5.75)
Package / Case8-PowerTDFN

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