Name: TPH1110FNH,L1Q
Brand: Toshiba Semiconductor and Storage
SKU: TPH1110FNH,L1Q
Price: 1.73 USD
Availability: InStock

REF: TPH1110FNH,L1Q Toshiba Semiconductor and Storage

TPH1110FNH,L1Q

Toshiba Semiconductor and Storage

MOSFET N-CH 250V 10A 8SOP

TPH1110FNH,L1Q is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N-CH 250V 10A 8SOP. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case 8-PowerVDFN.

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In Stock: 7,573

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	250 V
Current - Continuous Drain (Id) @ 25°C	10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	112mOhm @ 5A, 10V
Vgs(th) (Max) @ Id	4V @ 300µA
Gate Charge (Qg) (Max) @ Vgs	11 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1100 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	1.6W (Ta), 57W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SOP Advance (5x5)
Package / Case	8-PowerVDFN