Name: TPCC8105,L1Q(CM
Brand: Toshiba Semiconductor and Storage
SKU: TPCC8105,L1Q(CM
Availability: InStock

REF: TPCC8105,L1Q(CM Toshiba Semiconductor and Storage

TPCC8105,L1Q(CM

Toshiba Semiconductor and Storage

MOSFET P-CH 30V 23A 8TSON

TPCC8105,L1Q(CM is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET P-CH 30V 23A 8TSON. Key specifications: mounting type Surface Mount, operating temperature 150°C, package / case 8-VDFN Exposed Pad.

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In Stock: 9,437

Specifications

17 parameters

Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	23A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	7.8mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id	2V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	76 nC @ 10 V

Vgs (Max)	+20V, -25V
Input Capacitance (Ciss) (Max) @ Vds	3240 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	700mW (Ta), 30W (Tc)
Operating Temperature	150°C
Mounting Type	Surface Mount
Supplier Device Package	8-TSON Advance (3.3x3.3)
Package / Case	8-VDFN Exposed Pad