Name: TPC8A06-H(TE12LQM)
Brand: Toshiba Semiconductor and Storage
SKU: TPC8A06-H(TE12LQM)
Availability: InStock

REF: TPC8A06-H(TE12LQM) Toshiba Semiconductor and Storage

TPC8A06-H(TE12LQM)

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 12A 8SOP

TPC8A06-H(TE12LQM) is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N-CH 30V 12A 8SOP. Key specifications: mounting type Surface Mount, package / case 8-SOIC (0.173", 4.40mm Width).

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In Stock: 2,494

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	10.1mOhm @ 6A, 10V
Vgs(th) (Max) @ Id	2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	19 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1800 pF @ 10 V
FET Feature	Schottky Diode (Body)
Power Dissipation (Max)	-
Operating Temperature	-
Mounting Type	Surface Mount
Supplier Device Package	8-SOP (5.5x6.0)
Package / Case	8-SOIC (0.173", 4.40mm Width)