Name: TPC8A05-H(TE12L,QM
Brand: Toshiba Semiconductor and Storage
SKU: TPC8A05-H(TE12L,QM
Availability: InStock

REF: TPC8A05-H(TE12L,QM Toshiba Semiconductor and Storage

TPC8A05-H(TE12L,QM

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 10A 8SOP

TPC8A05-H(TE12L,QM is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N-CH 30V 10A 8SOP. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case 8-SOIC (0.173", 4.40mm Width).

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In Stock: 3,919

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	13.3mOhm @ 5A, 10V
Vgs(th) (Max) @ Id	2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1700 pF @ 10 V
FET Feature	Schottky Diode (Body)
Power Dissipation (Max)	1W (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SOP (5.5x6.0)
Package / Case	8-SOIC (0.173", 4.40mm Width)