Name: TPC6006-H(TE85L,F)
Brand: Toshiba Semiconductor and Storage
SKU: TPC6006-H(TE85L,F)
Availability: InStock

REF: TPC6006-H(TE85L,F) Toshiba Semiconductor and Storage

TPC6006-H(TE85L,F)

Toshiba Semiconductor and Storage

MOSFET N-CH 40V 3.9A VS-6

TPC6006-H(TE85L,F) is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N-CH 40V 3.9A VS-6. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case SOT-23-6 Thin, TSOT-23-6.

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In Stock: 2,338

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	3.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	75mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id	2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	4.4 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	251 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	700mW (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	VS-6 (2.9x2.8)
Package / Case	SOT-23-6 Thin, TSOT-23-6