TK9P65W,RQ - Toshiba Semiconductor and Storage - Transistors - FETs, MOSFETs - Single
REF: TK9P65W,RQ Toshiba Semiconductor and Storage
TK9P65W,RQ

Toshiba Semiconductor and Storage

MOSFET N-CH 650V 9.3A DPAK

TK9P65W,RQ is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N-CH 650V 9.3A DPAK. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case TO-252-3, DPak (2 Leads + Tab), SC-63.

In Stock: 3,439

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C9.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs560mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id3.5V @ 350µA
Gate Charge (Qg) (Max) @ Vgs20 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds700 pF @ 300 V
FET Feature-
Power Dissipation (Max)80W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDPAK
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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