Name: TK8Q60W,S1VQ
Brand: Toshiba Semiconductor and Storage
SKU: TK8Q60W,S1VQ
Price: 2.00 USD
Availability: InStock

REF: TK8Q60W,S1VQ Toshiba Semiconductor and Storage

TK8Q60W,S1VQ

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 8A IPAK

TK8Q60W,S1VQ is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N-CH 600V 8A IPAK. Key specifications: mounting type Through Hole, operating temperature 150°C (TJ), package / case TO-251-3 Stub Leads, IPak.

Datasheet Request a Quote

In Stock: 6,600

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	500mOhm @ 4A, 10V
Vgs(th) (Max) @ Id	3.7V @ 400µA
Gate Charge (Qg) (Max) @ Vgs	18.5 nC @ 10 V

Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	570 pF @ 300 V
FET Feature	Super Junction
Power Dissipation (Max)	80W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	I-Pak
Package / Case	TO-251-3 Stub Leads, IPak