TK8P60W,RVQ - Toshiba Semiconductor and Storage - Transistors - FETs, MOSFETs - Single
REF: TK8P60W,RVQ Toshiba Semiconductor and Storage
TK8P60W,RVQ

Toshiba Semiconductor and Storage

MOSFET N CH 600V 8A DPAK

TK8P60W,RVQ is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N CH 600V 8A DPAK. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case TO-252-3, DPak (2 Leads + Tab), SC-63.

In Stock: 8,114

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs500mOhm @ 4A, 10V
Vgs(th) (Max) @ Id3.7V @ 400µA
Gate Charge (Qg) (Max) @ Vgs18.5 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds570 pF @ 300 V
FET FeatureSuper Junction
Power Dissipation (Max)80W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDPAK
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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