TK7S10N1Z,LQ - Toshiba Semiconductor and Storage - Transistors - FETs, MOSFETs - Single
REF: TK7S10N1Z,LQ Toshiba Semiconductor and Storage
TK7S10N1Z,LQ

Toshiba Semiconductor and Storage

MOSFET N-CH 100V 7A DPAK

TK7S10N1Z,LQ is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N-CH 100V 7A DPAK. Key specifications: mounting type Surface Mount, operating temperature 175°C (TJ), package / case TO-252-3, DPak (2 Leads + Tab), SC-63.

In Stock: 7,931

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs48mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs7.1 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds470 pF @ 10 V
FET Feature-
Power Dissipation (Max)50W (Tc)
Operating Temperature175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDPAK+
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Need a Quote for TK7S10N1Z,LQ?

Submit your RFQ and get a quote within 24 hours.

Need components fast? Get pricing & lead time within 24 hours. Submit an RFQ →